@Article{TavaresSPCSOFRA:2017:InNePh,
author = "Tavares, M. A. B. and Silva, M. J. da and Peres, M. L. and Castro,
S. de and Soares, D. A. W. and Okasaki, Anderson Kenji and
Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira and
Abramof, Eduardo",
affiliation = "{Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade
Federal de Itajub{\'a} (UNIFEI)} and {Universidade Federal de
Itajub{\'a} (UNIFEI)} and {Universidade Federal de S{\~a}o
Carlos (UFSCar)} and {Universidade Federal de Itajub{\'a}
(UNIFEI)} and {Instituto Nacional de Pesquisas Espaciais (INPE)}
and {Instituto Nacional de Pesquisas Espaciais (INPE)} and
{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)}",
title = "Investigation of negative photoconductivity in p-type Pb1-xSnxTe
film",
journal = "Applied Physics Letters",
year = "2017",
volume = "110",
number = "4",
pages = "042102",
abstract = "We investigated the negative photoconductivity (NPC) effect that
was observed in a p-type Pb1-xSnxTe film for temperatures varying
from 300 K down to 85 K. We found that this effect is a
consequence of defect states located in the bandgap which act as
trapping levels, changing the relation between generation and
recombination rates. Theoretical calculations predict
contributions to the NPC from both conduction and valence bands,
which are in accordance with the experimental observations.",
doi = "10.1063/1.4974539",
url = "http://dx.doi.org/10.1063/1.4974539",
issn = "0003-6951",
language = "en",
targetfile = "tavares_investigation.pdf",
urlaccessdate = "27 abr. 2024"
}